Timing chains for accessing memory cells

ABSTRACT

Methods, systems, and devices for timing chains for accessing memory cells are described to implement some delays at logic circuitry under an array of memory cells. The memory array logic may represent CMOS under array logic circuitry. A bank group logic may generate a first memory operation and a longer delay corresponding to a timing between the first operation and a second operation. The first operation may represent an access operation, a precharging operation, or the like. The memory array logic may be signaled regarding the first operation and may generate one or more smaller delays associated with one or more sub-operations of the first operation. The smaller delays may be tunable, which may support a memory device or controller to implement operations or sub-operations with different timings based on different processes, different memory cell characteristics, or different temperatures, among other examples.

BACKGROUND

The following relates generally to one or more memory systems and morespecifically to timing chains for accessing memory cells.

Memory devices are widely used to store information in variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Information is stored byprograming memory cells within a memory device to various states. Forexample, binary memory cells may be programmed to one of two supportedstates, often denoted by a logic 1 or a logic 0. In some examples, asingle memory cell may support more than two states, any one of whichmay be stored. To access the stored information, a component may read,or sense, at least one stored state in the memory device. To storeinformation, a component may write, or program, the state in the memorydevice.

Various types of memory devices and memory cells exist, includingmagnetic hard disks, random access memory (RAM), read-only memory (ROM),dynamic RAM (DRAM), synchronous dynamic RAM (SDRAM), ferroelectric RAM(FeRAM), magnetic RAM (MRAM), resistive RAM (RRAM), flash memory, phasechange memory (PCM), self-selecting memory, chalcogenide memorytechnologies, and others. Memory cells may be volatile or non-volatile.Non-volatile memory, e.g., FeRAM, may maintain their stored logic statefor extended periods of time even in the absence of an external powersource. Volatile memory devices, e.g., DRAM, may lose their stored statewhen disconnected from an external power source.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example of a system that supports timing chainsfor accessing memory cells in accordance with examples as disclosedherein.

FIG. 2 illustrates an example of a memory array that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein.

FIG. 3 illustrates an example of a bank group that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein.

FIG. 4 illustrates an example of a timing diagram that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein.

FIG. 5 illustrates an example of a memory bank that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein.

FIG. 6 shows a block diagram of a memory device that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein.

FIG. 7 shows a flowchart illustrating a method or methods that supporttiming chains for accessing memory cells in accordance with examples asdisclosed herein.

DETAILED DESCRIPTION

A memory device may include one or more memory dies having one or morebank groups. Each bank group may include one or more banks that mayinclude one or more sections that may include one or more memory arrays(e.g., patches). Bank group logic corresponding to a bank group mayinclude one or more circuits to generate timing delays between one ormore signals or operations. The bank group logic may transmit commands,signals, and/or operations to one bank or to multiple banks of memoryarrays. Specified delays may be introduced by the bank group logicbetween the one or more transmissions in order to perform operations ata correct time and ensure that a first operation is finished beforebeginning a second operation (e.g., to allow memory components time toperform actions generated by the one or more transmissions). Sectionand/or patch logic may include one or more circuits associated with agiven section or patch of memory that may receive one or more signalsfrom the bank group logic and determine the delays generated by the bankgroup logic based on the signaling.

Some memory systems may implement all delays via bank group logic. Insome cases, timing circuits associated with the bank group logic maytake up a relatively large amount of space (e.g., in order to generatelarger timings between operations and signals), which may increase asize of an associated memory device. Additionally, longer delaysimplemented by bank group logic may not adjust as operating conditionsof a memory device change. For example, delays may, in some cases, bemore accurate if they are adaptable to different processes, adaptable tohow a given memory cell responds to specific inputs, adaptable totemperature considerations, etc.

Accordingly, the present disclosure describes techniques and apparatusesfor implementing some delays at patch-level or section-level logic(e.g., via complementary metal oxide semiconductor (CMOS) under array(CuA) logic circuitry). The bank group logic may generate one or moreoperations (e.g., activate, precharge, etc.) and may generate longerdelays corresponding to a timing between the one or more operations.However, smaller delays, based on smaller circuitry (e.g., the CuAlogic), may be implemented in logic positioned under a patch or sectionof memory (e.g., under an array of memory cells). The patch or sectionlogic may receive the one or more operations and may generate smalleroperations with smaller delays, where the smaller operations mayrepresent sub-operations corresponding to the one or more operations.The smaller delays generated by patch or section logic may be tunable,which may support a memory device or controller to implement operationsor sub-operations with different timings based on different processes,memory cell characteristics, temperatures, etc. Additionally, patchlogic or section logic may occupy less space than corresponding bankgroup logic, which may in turn reduce a footprint of delay logic withina memory die. Generating the smaller delays at the patch or sectionlogic may also reduce a numerical quantity (e.g., number) of sockets,tracks, or wiring within a memory device used to communicate signals todifferent layers or portions of the memory device.

Features of the disclosure are initially described in the context ofmemory systems and dies as described with reference to FIGS. 1 and 2.Features of the disclosure are described in the context of a bank group,a timing diagram, and a memory bank as described with reference to FIGS.3-5. These and other features of the disclosure are further illustratedby and described with reference to an apparatus diagram and a flowchartthat relate to timing chains for accessing memory cells as describedwith references to FIGS. 6-7.

FIG. 1 illustrates an example of a system 100 that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein. The system 100 may include a host device 105, a memorydevice 110, and a plurality of channels 115 coupling the host device 105with the memory device 110. The system 100 may include one or morememory devices 110, but aspects of the one or more memory devices 110may be described in the context of a single memory device (e.g., memorydevice 110).

The system 100 may include portions of an electronic device, such as acomputing device, a mobile computing device, a wireless device, agraphics processing device, a vehicle, or other systems. For example,the system 100 may illustrate aspects of a computer, a laptop computer,a tablet computer, a smartphone, a cellular phone, a wearable device, aninternet-connected device, a vehicle controller, or the like. The memorydevice 110 may be a component of the system operable to store data forone or more other components of the system 100.

At least portions of the system 100 may be examples of the host device105. The host device 105 may be an example of a processor or othercircuitry within a device that uses memory to execute processes, such aswithin a computing device, a mobile computing device, a wireless device,a graphics processing device, a computer, a laptop computer, a tabletcomputer, a smartphone, a cellular phone, a wearable device, aninternet-connected device, a vehicle controller, or some otherstationary or portable electronic device, among other examples. In someexamples, the host device 105 may refer to the hardware, firmware,software, or a combination thereof that implements the functions of anexternal memory controller 120. In some examples, the external memorycontroller 120 may be referred to as a host or a host device 105. Insome cases, host device 105 may transmit one or more commands or signalsto a memory device 110 in order to perform one or more operations at thememory device 110 (e.g., a read operation, write operation, etc.).

A memory device 110 may be an independent device or a component that isoperable to provide physical memory addresses/space that may be used orreferenced by the system 100. In some examples, a memory device 110 maybe configurable to work with one or more different types of hostdevices. Signaling between the host device 105 and the memory device 110may be operable to support one or more of: modulation schemes tomodulate the signals, various pin configurations for communicating thesignals, various form factors for physical packaging of the host device105 and the memory device 110, clock signaling and synchronizationbetween the host device 105 and the memory device 110, timingconventions, or other factors.

The memory device 110 may be operable to store data for the componentsof the host device 105. In some examples, the memory device 110 may actas a slave-type device to the host device 105 (e.g., responding to andexecuting commands provided by the host device 105 through the externalmemory controller 120). Such commands may include one or more of a writecommand for a write operation, a read command for a read operation, arefresh command for a refresh operation, or other commands.

The host device 105 may include one or more of an external memorycontroller 120, a processor 125, a basic input/output system (BIOS)component 130, or other components such as one or more peripheralcomponents or one or more input/output controllers. The components ofhost device may be in coupled with one another using a bus 135.

The processor 125 may be operable to provide control or otherfunctionality for at least portions of the system 100 or at leastportions of the host device 105. The processor 125 may be ageneral-purpose processor, a digital signal processor (DSP), anapplication-specific integrated circuit (ASIC), a field-programmablegate array (FPGA) or other programmable logic device, discrete gate ortransistor logic, discrete hardware components, or a combination ofthese components. In such examples, the processor 125 may be an exampleof a central processing unit (CPU), a graphics processing unit (GPU), ageneral purpose GPU (GPGPU), or a system on a chip (SoC), among otherexamples. In some examples, the external memory controller 120 may beimplemented by or be a part of the processor 125.

The BIOS component 130 may be a software component that includes a BIOSoperated as firmware, which may initialize and run various hardwarecomponents of the system 100 or the host device 105. The BIOS component130 may also manage data flow between the processor 125 and the variouscomponents of the system 100 or the host device 105. The BIOS component130 may include a program or software stored in one or more of read-onlymemory (ROM), flash memory, or other non-volatile memory.

The memory device 110 may include a device memory controller 155 and oneor more memory dies 160 (e.g., memory chips) to support a desiredcapacity or a specified capacity for data storage. Each memory die 160may include a local memory controller 165 (e.g., local memory controller165-a, local memory controller 165-b, local memory controller 165-N) anda memory array 170 (e.g., memory array 170-a, memory array 170-b, memoryarray 170-N). A memory array 170 may be a collection (e.g., one or moregrids, one or more banks, one or more tiles, one or more sections) ofmemory cells, with each memory cell being operable to store at least onebit of data. A memory device 110 including two or more memory dies maybe referred to as a multi-die memory or a multi-die package or amulti-chip memory or a multi-chip package.

The memory die 160 may be an example of a two-dimensional (2D) array ofmemory cells or may be an example of a three-dimensional (3D) array ofmemory cells. A 2D memory die 160 may include a single memory array 170.A 3D memory die 160 may include two or more memory arrays 170, which maybe stacked on top of one another or positioned next to one another(e.g., relative to a substrate). In some examples, memory arrays 170 ina 3D memory die 160 may be referred to as decks, levels, layers, ordies. A 3D memory dies 160 may include any quantity of stacked memoryarrays 170 (e.g., two high, three high, four high, five high, six high,seven high, eight high). In some 3D memory dies 160, different decks mayshare at least one common access line such that some decks may share oneor more of a word line, a digit line, or a plate line.

The device memory controller 155 may include circuits, logic, orcomponents operable to control operation of the memory device 110. Thedevice memory controller 155 may include the hardware, the firmware, orthe instructions that enable the memory device 110 to perform variousoperations and may be operable to receive, transmit, or executecommands, data, or control information related to the components of thememory device 110. The device memory controller 155 may be operable tocommunicate with one or more of the external memory controller 120, theone or more memory dies 160, or the processor 125. In some examples, thedevice memory controller 155 may control operation of the memory device110 described herein in conjunction with the local memory controller 165of the memory die 160.

In some examples, the memory device 110 may receive data or commands orboth from the host device 105. For example, the memory device 110 mayreceive a write command indicating that the memory device 110 is tostore data for the host device 105 or a read command indicating that thememory device 110 is to provide data stored in a memory die 160 to thehost device 105.

A local memory controller 165 (e.g., local to a memory die 160) may beoperable to control operation of the memory die 160. In some examples, alocal memory controller 165 may be operable to communicate (e.g.,receive or transmit data or commands or both) with the device memorycontroller 155. In some examples, a memory device 110 may not include adevice memory controller 155, and a local memory controller 165, or theexternal memory controller 120 may perform various functions describedherein. As such, a local memory controller 165 may be operable tocommunicate with the device memory controller 155, with other localmemory controllers 165, or directly with the external memory controller120, or the processor 125, or a combination thereof. Examples ofcomponents that may be included in the device memory controller 155 orthe local memory controllers 165 or both may include receivers forreceiving signals (e.g., from the external memory controller 120),transmitters for transmitting signals (e.g., to the external memorycontroller 120), decoders for decoding or demodulating received signals,encoders for encoding or modulating signals to be transmitted, orvarious other circuits or controllers operable for supporting describedoperations of the device memory controller 155 or local memorycontroller 165 or both.

The external memory controller 120 may be operable to enablecommunication of one or more of information, data, or commands betweencomponents of the system 100 or the host device 105 (e.g., the processor125) and the memory device 110. The external memory controller 120 mayconvert or translate communications exchanged between the components ofthe host device 105 and the memory device 110. In some examples, theexternal memory controller 120 or other component of the system 100 orthe host device 105, or its functions described herein, may beimplemented by the processor 125. For example, the external memorycontroller 120 may be hardware, firmware, or software, or somecombination thereof implemented by the processor 125 or other componentof the system 100 or the host device 105. Although the external memorycontroller 120 is depicted as being external to the memory device 110,in some examples, the external memory controller 120, or its functionsdescribed herein, may be implemented by one or more components of amemory device 110 (e.g., a device memory controller 155, a local memorycontroller 165) or vice versa.

The components of the host device 105 may exchange information with thememory device 110 using one or more channels 115. The channels 115 maybe operable to support communications between the external memorycontroller 120 and the memory device 110, such as the one or moresignals and/or commands for the memory device to perform one or moreoperations. Each channel 115 may be examples of transmission mediumsthat carry information between the host device 105 and the memorydevice. Each channel 115 may include one or more signal paths ortransmission media (e.g., conductors) between terminals associated withthe components of system 100. A signal path may be an example of aconductive path operable to carry a signal. For example, a channel 115may include a first terminal including one or more pins or pads at thehost device 105 and one or more pins or pads at the memory device 110. Apin may be an example of a conductive input or output point of a deviceof the system 100, and a pin may be operable to act as part of achannel.

Channels 115 (and associated signal paths and terminals) may bededicated to communicating one or more types of information. Forexample, the channels 115 may include one or more command and address(CA) channels 186, one or more clock signal (CK) channels 188, one ormore data (DQ) channels 190, one or more other channels 192, or acombination thereof. In some examples, signaling may be communicatedover the channels 115 using single data rate (SDR) signaling or doubledata rate (DDR) signaling. In SDR signaling, one modulation symbol(e.g., signal level) of a signal may be registered for each clock cycle(e.g., on a rising or falling edge of a clock signal). In DDR signaling,two modulation symbols (e.g., signal levels) of a signal may beregistered for each clock cycle (e.g., on both a rising edge and afalling edge of a clock signal).

A bank group logic of a memory die 160 may generate one or moreoperations (e.g., activate, precharge, etc.) and may generate longerdelays corresponding to a timing between the one or more operations.Smaller delays, based on smaller circuitry (e.g., CuA logic), may beimplemented in logic positioned under a patch or section of memory(e.g., under an array of memory cells). The patch logic or section logicmay receive the one or more operations and may generate smalleroperations with smaller delays, where the smaller operations mayrepresent sub-operations or steps corresponding to the one or moreoperations. Generating smaller delays at patch-level logic orsection-level logic may provide advantages by occupying less memory diespace, by reducing a numerical quantity of tracks and sockets, and bysupporting adjustable delays at a bank, section, or patch level.

FIG. 2 illustrates an example of a memory array 200 that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein. The memory array 200 may be an example of the memoryarrays 170 described with reference to FIG. 1. In some examples, thememory array 200 may be included in a memory chip, a memory device, oran electronic memory apparatus. The memory array 200 may include one ormore memory cells 205 that may each be programmable to store differentlogic states (e.g., a programmed one of a set of two or more possiblestates). For example, a memory cell 205 may be operable to store one bitof information at a time (e.g., a logic 0 or a logic 1). In someexamples, a memory cell 205 (e.g., a multi-level memory cell) may beoperable to store more than one bit of information at a time (e.g., alogic 00, logic 01, logic 10, a logic 11). In some examples, the memorycells 205 may be arranged in an array, such as a memory array 170described with reference to FIG. 1.

A memory cell 205 may store a charge representative of the programmablestates in a capacitor. DRAM architectures may include a capacitor thatincludes a dielectric material to store a charge representative of theprogrammable state. In other memory architectures, other storage devicesand components are possible. For example, nonlinear dielectric materialsmay be employed. The memory cell 205 may include a logic storagecomponent, such as capacitor 230, and a switching component 235. Thecapacitor 230 may be an example of a dielectric capacitor or aferroelectric capacitor. A node of the capacitor 230 may be coupled witha voltage source 240, which may be the cell plate reference voltage,such as Vpl, or may be ground, such as Vss.

The memory array 200 may include one or more access lines (e.g., one ormore word lines 210 and one or more digit lines 215) arranged in apattern, such as a grid-like pattern. An access line may be a conductiveline coupled with a memory cell 205 and may be used to perform accessoperations on the memory cell 205. In some examples, word lines 210 maybe referred to as row lines. In some examples, digit lines 215 may bereferred to as column lines or bit lines. References to access lines,row lines, column lines, word lines, digit lines, or bit lines, or theiranalogues, are interchangeable without loss of understanding oroperation. Memory cells 205 may be positioned at intersections of theword lines 210 and the digit lines 215.

Operations, such as reading and writing, may be performed on the memorycells 205 by activating or selecting access lines such as one or more ofa word line 210 or a digit line 215. By biasing a word line 210 and adigit line 215 (e.g., applying a voltage to the word line 210 or thedigit line 215), a single memory cell 205 may be accessed at theirintersection. The intersection of a word line 210 and a digit line 215in either a two-dimensional or three-dimensional configuration may bereferred to as an address of a memory cell 205.

Accessing the memory cells 205 may be controlled through a row decoder220 or a column decoder 225. For example, a row decoder 220 may receivea row address from the local memory controller 260 and activate a wordline 210 based on the received row address. A column decoder 225 mayreceive a column address from the local memory controller 260 and mayactivate a digit line 215 based on the received column address. In somecases, access operations may be received by a bank group (e.g., from ahost device or a portion of a memory device) and communicated to one ormore banks of memory arrays, such that the one or more banks of memoryarrays may perform the access operations.

Selecting or deselecting the memory cell 205 may be accomplished byactivating or deactivating the switching component 235 using a word line210. The capacitor 230 may be coupled with the digit line 215 using theswitching component 235. For example, the capacitor 230 may be isolatedfrom digit line 215 when the switching component 235 is deactivated, andthe capacitor 230 may be coupled with digit line 215 when the switchingcomponent 235 is activated.

A word line 210 may be a conductive line in electronic communicationwith a memory cell 205 that is used to perform access operations on thememory cell 205. In some architectures, the word line 210 may be coupledwith a gate of a switching component 235 of a memory cell 205 and may beoperable to control the switching component 235 of the memory cell. Insome architectures, the word line 210 may be coupled with a node of thecapacitor of the memory cell 205 and the memory cell 205 may not includea switching component.

A digit line 215 may be a conductive line that connects the memory cell205 with a sense component 245. In some architectures, the memory cell205 may be selectively coupled with the digit line 215 during portionsof an access operation. For example, the word line 210 and the switchingcomponent 235 of the memory cell 205 may be operable to couple and/orisolate the capacitor 230 of the memory cell 205 and the digit line 215.In some architectures, the memory cell 205 may be coupled with the digitline 215.

The sense component 245 may be operable to detect a state (e.g., acharge) stored on the capacitor 230 of the memory cell 205 and determinea logic state of the memory cell 205 based on the stored state. Thesense component 245 may include one or more sense amplifiers to amplifyor otherwise convert a signal resulting from accessing the memory cell205. The sense component 245 may compare a signal detected from thememory cell 205 to a reference 250 (e.g., a reference voltage). Thedetected logic state of the memory cell 205 may be provided as an outputof the sense component 245 (e.g., to an input/output 255), and mayindicate the detected logic state to another component of a memorydevice that includes the memory array 200.

The local memory controller 260 may control the accessing of memorycells 205 through the various components (e.g., row decoder 220, columndecoder 225, sense component 245). The local memory controller 260 maybe an example of the local memory controller 165 described withreference to FIG. 1. In some examples, one or more of the row decoder220, column decoder 225, and sense component 245 may be co-located withthe local memory controller 260. The local memory controller 260 may beoperable to receive one or more of commands or data from one or moredifferent memory controllers (e.g., an external memory controller 120associated with a host device 105, another controller associated withthe memory array 200), translate the commands or the data (or both) intoinformation that can be used by the memory array 200, perform one ormore operations on the memory array 200, and communicate data from thememory array 200 to a host device 105 based on performing the one ormore operations. The local memory controller 260 may generate rowsignals and column address signals to activate the target word line 210and the target digit line 215. The local memory controller 260 may alsogenerate and control various voltages or currents used during theoperation of the memory array 200. In general, the amplitude, the shape,or the duration of an applied voltage or current discussed herein may bevaried and may be different for the various operations discussed inoperating the memory array 200.

The local memory controller 260 may be operable to perform one or moreaccess operations on one or more memory cells 205 of the memory array200. Examples of access operations may include a write operation, a readoperation, a refresh operation, a precharge operation, or an activateoperation, among others. In some examples, access operations may beperformed by or otherwise coordinated by the local memory controller 260in response to various access commands (e.g., from a host device 105).The local memory controller 260 may be operable to perform other accessoperations not listed here or other operations related to the operatingof the memory array 200 that are not directly related to accessing thememory cells 205.

The local memory controller 260 may be operable to perform a writeoperation (e.g., a programming operation) on one or more memory cells205 of the memory array 200. During a write operation, a memory cell 205of the memory array 200 may be programmed to store a desired logicstate. The local memory controller 260 may identify a target memory cell205 on which to perform the write operation. The local memory controller260 may identify a target word line 210 and a target digit line 215coupled with the target memory cell 205 (e.g., the address of the targetmemory cell 205). The local memory controller 260 may activate thetarget word line 210 and the target digit line 215 (e.g., applying avoltage to the word line 210 or digit line 215) to access the targetmemory cell 205. The local memory controller 260 may apply a specificsignal (e.g., write pulse) to the digit line 215 during the writeoperation to store a specific state (e.g., charge) in the capacitor 230of the memory cell 205. The pulse used as part of the write operationmay include one or more voltage levels over a duration.

The local memory controller 260 may be operable to perform a readoperation (e.g., a sense operation) on one or more memory cells 205 ofthe memory array 200. During a read operation, the logic state stored ina memory cell 205 of the memory array 200 may be determined. The localmemory controller 260 may identify a target memory cell 205 on which toperform the read operation. The local memory controller 260 may identifya target word line 210 and a target digit line 215 coupled with thetarget memory cell 205 (e.g., the address of the target memory cell205). The local memory controller 260 may activate the target word line210 and the target digit line 215 (e.g., applying a voltage to the wordline 210 or digit line 215) to access the target memory cell 205. Thetarget memory cell 205 may transfer a signal to the sense component 245in response to biasing the access lines. The sense component 245 mayamplify the signal. The local memory controller 260 may activate thesense component 245 (e.g., latch the sense component) and therebycompare the signal received from the memory cell 205 to the reference250. Based on that comparison, the sense component 245 may determine alogic state that is stored on the memory cell 205.

A bank group logic of a memory die may generate one or more operations(e.g., activate, precharge, etc.) and may generate longer delayscorresponding to a timing between the one or more operations. Smallerdelays, based on smaller circuitry (e.g., CuA logic), may be implementedin logic positioned under a patch or section of memory (e.g., under amemory array 200). The patch logic or section logic may receive the oneor more operations and may generate smaller operations with smallerdelays, where the smaller operations may represent sub-operations orsteps corresponding to the one or more operations. Generating smallerdelays at patch-level or section-level logic may provide advantages byoccupying less memory die space, by reducing a numerical quantity oftracks and sockets, and by supporting adjustable delays at a bank,section, or patch level.

FIG. 3 illustrates an example of a bank group 300 that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein. A bank group, such as the bank group 300, mayrepresent a unit of memory included in a memory die, where the memorydie may be an example of a memory die described with reference toFIG. 1. A memory die may include one or more bank groups 300, and insome cases, a bank group 300 may be a largest addressable memory unit ofa memory die. In some cases, multiple bank groups 300 may be accessed inparallel in order to maintain a specified bandwidth when performing anoperation with a longer access time (e.g., a precharge operation). Eachbank group may include a memory array, which may be an example of amemory array described with reference to FIGS. 1 and 2.

A patch 305 may include or represent an array of memory cells, such as amemory array described with reference to FIG. 2. For example, a patch305 may be a size of a memory cell array that is repeated to make a bank315. Operational circuits (e.g., word line or bit line drivers, senseamplifiers, etc.) may be located under a patch 305 and may beindependent or may be shared among patches 305. In some cases, theoperational circuits may be examples of CuA. A section 310 may includeone or more patches 305 (e.g., a row of patches 305), which may beaddressable via a section bus 320. In some cases, when a section 310 isaccessed, each patch 305 of the section 310 may be turned on. A bank 315of memory may include one or more sections 310, and in turn, a bankgroup 300 may include one or more banks 315. A bank 315 may (e.g., usinga single circuit or multiple circuits working collectively) latchaddress signals (e.g., via an address latch), may load fuse trimsettings for local row address strobes (RAS), and may load test modesignals. A bank 315 may also include one or more drivers.

A bank group logic 325 corresponding to the bank group 300 may includeone or more circuits to generate timing delays between one or moresignals or operations. The bank group logic 325 may transmit one or moreof an address 330, a command 335, a test mode 340, or fuse settings 345,among other examples of signal or operations, to one bank 315 or tomultiple banks 315. Specified delays may be introduced by the bank grouplogic 325 between the one or more signals in order to perform operationsat a correct time and ensure that an operation is finished beforebeginning another operation (e.g., to allow memory components time toperform actions between the one or more signals). Section and/or patchlogic may include one or more circuits associated with a given section310 or patch 305. Section logic or patch logic may receive one or moresignals from the bank group logic 325 via a respective bank 315 anddetermine the delays generated by the bank group logic 325 based on therelayed signaling.

In some examples, a memory die may include eight bank groups 300 and abank group 300 may include eight banks 315 (e.g., banks 315-a through315-h). A bank 315-a may include sections 310-a and 310-b, where section310-a may include patches 305-a through 305-g and section 310-b mayinclude patches 305-h through 305-n. In some cases, a bank 315 mayinclude four sections 310. When accessing the bank groups 300 inparallel, a memory die with eight bank groups 300 and eight banks 315 ineach group may operate using 64-bank parallelism. While this specificexample is described herein, it is to be understood that a bank group300 may include any numerical quantity of banks 315, a bank 315 mayinclude any numerical quantity of sections 310, and a section 310 mayinclude any numerical quantity of patches 305.

In some examples, the bank group logic 325 may transmit a command 335 toone or more banks 315, including bank 315-a. The command 335 mayinclude, for example, one or more of a sense amplifier control 350 or arow control 355. The sense amplifier control 350 and/or row control 355may be received by or forwarded to sections 310-a and 310-b (e.g., viarespective section buses 320-a and 320-b), such that the patches 305-athrough 305-n may receive and act on the commands.

Some memory systems may implement delays via bank group logic 325. Insome cases, timing circuits associated with the bank group logic 325 maytake up a relatively large amount of space (e.g., in order to generatelarger timings between operations and signals), which may increase asize of an associated memory device. Additionally, longer delaysimplemented by bank group logic 325 may not adjust as operatingconditions of a memory device change. For example, delays may, in somecases, be more accurate if they are adaptable to different processes,adaptable to how a given memory cell responds to specific inputs,adaptable to temperature considerations, etc.

Accordingly, the present disclosure describes techniques and apparatusesfor implementing some delays at patch or section-level logic (e.g., CuAlogic). Longer delays associated with different operations may beimplemented by the bank group logic 325 for a bank group 300. However,smaller delays, based on smaller circuitry (e.g., CuA logic), may beimplemented in logic positioned under a patch 305 (e.g., under an arrayof memory cells). In some cases, patch logic may also be shared across asection 310, which may be referred to as section logic. The smallerdelays generated by patch or section logic may be tunable, which maysupport a memory device or controller to implement operations orsub-operations with different timings based on different processes,memory cell characteristics, temperatures, etc. Additionally, patch orsection logic may occupy less space than corresponding bank group logic325, which may in turn reduce a footprint of delay logic within a memorydie. Generating the smaller delays at the patch or section logic mayalso reduce a numerical quantity of sockets, tracks, or wiring within amemory device used to communicate signals to different layers orportions of the memory device.

The smaller delays generated by patch logic or section logic maycorrespond to one or more portions of a command, operation, or signalwith longer delays generated by the bank group logic 325 (e.g.,generated from one or more channel inputs). For example, the bank grouplogic 325 may generate one or more operations (e.g., activate,precharge, etc.) and may generate longer delays corresponding to atiming between the one or more operations. The patch or section logicmay receive the one or more operations (e.g., via a respective bank 315)and may generate smaller operations with smaller delays, where thesmaller operations may represent sub-operations or steps correspondingto the one or more operations. These and other methods may provideadvantages by occupying less memory die space, by reducing a numericalquantity of tracks and sockets, and by supporting adjustable delays at abank, section, or patch level.

FIG. 4 illustrates an example of a timing diagram 400 that supportstiming chains for accessing memory cells in accordance with examples asdisclosed herein. Timing diagram 400 may implement aspects of bank group300 described with reference to FIG. 3. For example, operations 405 andassociated delays 410 may be generated by bank group logic 425associated with a bank group, which may be an example of the bank grouplogic described with reference to FIG. 3. The operations 405 may becommunicated to one or more banks 415, which may be examples of memorybanks described with reference to FIG. 3. For example, each bank 415 mayinclude one or more sections, and each section may include one or morepatches (e.g., memory arrays). The banks 415 may be included in a bankgroup, which in turn may be included in a memory die of a memory device.

An operation 405 may be or include one or more processes that may beperformed in association with a memory device or a memory array (e.g.,associated with reading, writing, or performing other operations on amemory cell). For example, an operation 405 may be or include anactivate operation, a precharge operation, or a word line startoperation, among other examples. An operation 405 may also be associatedwith one or more sub-operations 420. A sub-operation 420 may be orinclude one or more steps or methods included in an associated operation405, where performing the one or more sub-operations may result inperforming the associated operation 405. A sub-operation 420 may beassociated with a specific timing (e.g., a rising or falling edge of aclock signal) that may represent a defined time for completing one ormore methods or procedures of the associated operation 405.

The bank group logic 425 may generate one or more operations 405 andassociated delays 410 (e.g., larger delays 410) between the operations405 for a bank group, as already described with reference to FIG. 3. Theoperations 405 and associated delays 410 may be generated in response toinformation received by the bank group logic 425 via a channel (e.g.,from a host device or another portion of a memory device). Theoperations 405 and/or delays 410 may be communicated to one or morebanks 415 of the bank group (e.g., via one or more signals), where thesignals may trigger generation of one or more sub-operations 420 andassociated smaller delays 410 at section or patch logic (e.g., CuAlogic). In some cases, the larger delays 410 generated by the bank grouplogic 425 (e.g., delays 410-a, 410-b, or 410-c) may be considered globaldelays 410 or global timing events (e.g., with respect to the bankgroup), which in some cases may depend on or be generated from timingassociated with periphery logic circuits (e.g., and communicated via thechannel). In some cases, the smaller delays 410 generated by the sectionor patch logic may be considered local delays 410 or local timing eventsbecause the delays 410 and corresponding timing may be produced by locallogic circuitry.

A first sub-operation 420 of an operation 405 in a given bank 415 (e.g.,sub-operations 420-a, 420-b, 420-c, 420-d, 420-e, etc.) may be generatedby one or more global delays 410 (e.g., generated by the bank grouplogic 425). Subsequent sub-operations 420 (e.g., sub-operations 420-f,420-g, 420-h, 420-i, 420-j, etc.) may be generated by one or more localdelays 410 (e.g., by section or patch logic). The bank group logic 425may generate the one or more global delays 410 using aresistor-capacitor (RC) circuit, one or more oscillators, or acombination thereof. Similarly, patch or section logic may generate theone or more local delays 410 using an RC circuit, one or moreoscillators, or a combination thereof. The components used to generatethe smaller delays at the patch logic or section logic may be smallerthan other components used to generate the larger delays because thesmaller delays may have shorter durations than the larger delays. Insome cases, an oscillator may be or include a proportional to absolutetemperature (PTAT) oscillator or a complementary to absolute temperature(CTAT) oscillator. As such, timings and delays 410 generated by the bankgroup logic 425 may adjust to a temperature of the bank group and localtiming and delays 410 generated by the patch or section logic may adjustto a local temperature of an associated patch and/or section.

In some examples, a first operation 405 generated by the bank grouplogic 425 (e.g., in response to a command received via a channel) may bean activate start operation 405-a. The bank group logic 425 maycommunicate the operation 405-a to one or more banks 415 of the bankgroup and may generate a first delay 410-a (e.g., 21.5 nanoseconds (ns))until a next operation 405-b may start. In some cases, the bank grouplogic 425 may generate first delay 410-a using an RC circuit and anoscillator (e.g., a PTAT or CTAT). For example, the RC circuit maygenerate a first, shorter portion of the first delay 410-a (e.g., 1 to5.5 ns) and the oscillator may generate a second, longer portion of thefirst delay 410-a (e.g., 1 to 80 ns). In some cases, a portion of adelay 410 generated by an RC circuit and by an oscillator may be basedon a type of operation 405. Thus, an RC circuit and an oscillator maygenerate specific portions of delay 410-a of activate start operation405-a, and an RC circuit and an oscillator may generate differentportions of delay 410-b of a word line start operation 405-b.

A bank 415-a (e.g., patch or section logic of the bank 415-a) mayreceive an indication of the operation 405-a from the bank group logic425 and the patch or section logic of the bank 415-a may generate afirst sub-operation 420-a. In an example, a sub-operation 420 mayrepresent a procedure such as activating a transistor, a switch, etc.,applying a voltage to one or more components, or activating a latch,among other examples. The patch or section logic may generate second andthird local delays 410-d and 410-e (e.g., 1.5 ns), followed by secondand third sub-operations 420-f and 420-g, respectively. In a similarmanner, the bank group logic 425 may generate operations 405-b, 405-c,405-d, and 405-e and corresponding delays 410-b and 410-c, while sectionand/or patch logic may then generate corresponding sub-operations 420and associated smaller delays 410. In some examples, delay 410-b mayrepresent a delay of 32 ns and delay 410-c may represent a delay of 31ns.

Operations 405-b through 405-e may respectively begin firstsub-operations 420 within one or more banks 415 of the bank group (e.g.,via respective patch or section logic) and the respective patch orsection logic may generate one or more smaller delays 410 and one ormore following sub-operations 420. In some cases, a smaller or localdelay 410 may represent a delay of 1 ns, 1.5 ns, 2 ns, or 10 ns, amongother examples. In some cases, one or more smaller delays 410 may bedefined and stored in a register (e.g., a mode register) of the memorydevice, and implementing a smaller delay 410 may include identifying thesmaller delay 410 from the register. By using registers to generate thesmaller delays, the duration of the smaller delays 410 may be tuned, forexample, in response to changes in operating conditions such asdifferent delays based on different processes, memory cellcharacteristics, temperatures, memory cell wear, etc.

FIG. 5 illustrates an example of a memory bank 500 that supports timingchains for accessing memory cells in accordance with examples asdisclosed herein. Memory bank 500 may be or include an example of amemory bank described with reference to FIGS. 3 and 4. Memory bank 500may implement one or more aspects of bank group 300 or timing diagram400, as described with reference to FIGS. 3 and 4, respectively. Forexample, memory bank 500 may include one or more sections 510, where asection 510 may include one or more patches 505, as described withreference to FIG. 3. Memory bank 500 may further implement one or moreoperations and/or sub-operations as described with reference to FIG. 4(e.g., using one or more components of a section 510 or a patch 505).

A patch may include circuits (e.g., patch or section logic, such as CuA)including one or more local controls 515, one or more buffers 520,and/or one or more local drivers 525. Local controls 515 may include oneor more local RAS, local sense amplifier controls, and/or local rowcontrols. In some cases, local controls 515 may be shared across one ormore sections 510 and may be divided among respective patches 505 of theone or more sections 510. In some cases, the local controls 515 mayinclude one or more sense amplifiers, comparators, and/or otherelectronic devices. Buffers 520 may be located near a socket (e.g., tosimplify a communication and/or signaling structure). In some examples,one or more buffers 520 may make up a section buffer (e.g., describedwith reference to FIG. 3) Local drivers 525 may include one or morelocal sense amplifier drivers and/or local row drivers (e.g., plate andword line drivers).

One or more of the local controls 515, buffers 520, and local drivers525 may be used to generate local delays (e.g., local timing), such asthe shorter delays associated with sub-operations described withreference to FIG. 4. In some cases, circuits represented by the localcontrols 515, buffers 520, and local drivers 525 may work across asection 510 to generate local delays. For example, although the circuitsmay be distributed across multiple patches 505, the circuits may worktogether across patches 505 to generate local delays. Additionally oralternatively, the circuits within a patch 505 may generate a localdelay without working with one or more other circuits in another patch505.

The local controls 515 may receive signals (e.g., common signals such asan address, timing, test mode, and/or fuse inputs) from a bank grouplogic. The local controls 515 may then drive buffers 520 and localdrivers 525 within the memory bank 500 (e.g., within the patches 505 ofthe memory bank 500). For example, local controls 515 may receive asignal (e.g., a command, operation, or sub-operation) and may routeinformation from the signal to one or more corresponding buffers 520.The information may then be routed from the one or more correspondingbuffers 520 to one or more corresponding local drivers 525.

In some examples, the logic for generating the small delays maydistributed across a plurality of patches in a section or in a pluralityof patches in a bank. In one example, the memory bank 500 may includetwo sections 510-a and 510-b, and each section 510 may include sevenpatches 505. In some cases, the local controls 515 may be included inone of the sections 510 (e.g., section 510-b), and in some other cases,the local controls 515 may be included in each of the sections 510. Eachpatch of the sections 510-a and 510-b may also include at least aportion of one or more local drivers 525 and buffers 520. In the examplewhere the local controls 515 are included in section 510-b, the localcontrols 515 may receive a signal (e.g., a command, operation, orsub-operation) and may route information from the signal to one or morebuffers 520 in either or both of sections 510-a and 510-b. The one ormore buffers 520 may be indicated via the signal, may be determined bythe local controls 515, or both. The information may then be routed fromthe one or more buffers 520 to one or more local drivers 525 based oninformation in the signal or determined the local controls 515, or both.The one or more local drivers 525 may then carry out one or moreportions of a sub-operation that corresponds to the signal.

FIG. 6 shows a block diagram 600 of a memory device 605 that supportstiming chains for accessing memory cells in accordance with examples asdisclosed herein. The memory device 605 may be an example of aspects ofa memory device as described with reference to FIGS. 1-5. The memorydevice 605 may include a first delay component 610, a sub-operationcomponent 615, a second delay component 620, and an operation component625. Each of these modules may communicate, directly or indirectly, withone another (e.g., via one or more buses).

The first delay component 610 may implement, using bank group logicassociated with a bank group, a first delay between operations performedusing one or more banks of the bank group. In some cases, the firstdelay includes the first duration between initiating the operation andinitiating a second operation different than the operation.

The sub-operation component 615 may initiate a first sub-operation of anoperation performed using the one or more banks of the bank group basedon implementing the first delay. In some examples, initiating a set ofsub-operations of the operation based on implementing the first delay,where the set of sub-operations includes the first sub-operation and thesecond sub-operation.

The second delay component 620 may implement, using logic associatedwith a bank of the bank group, a second delay between the firstsub-operation of the operation and a second sub-operation of theoperation based on initiating the first sub-operation, the first delayhaving a first duration longer than a second duration of the seconddelay. In some examples, the second delay component 620 may identify thesecond delay using a register of a memory device, where implementing thesecond delay is based on identifying the second delay using theregister.

In some examples, the second delay component 620 may implement, usingthe logic associated with the bank of the bank group, a respectivesecond delay for each sub-operation of the set of sub-operations basedon initiating the set of sub-operations, where performing the operationis based on initiating the set of sub-operations.

In some cases, the logic is positioned under an array of memory cells aspart of a CuA logic. In some cases, the second delay includes the secondduration between initiating the first sub-operation of the operation andthe second sub-operation of the operation. In some cases, the logic isassociated with a patch of the bank of the bank group.

The operation component 625 may perform the operation based oninitiating the first sub-operation of the operation. In some examples,the operation component 625 may receive, from a host device, a commandto perform the operation using an array of memory cells, whereimplementing the first delay is based on receiving the command.

FIG. 7 shows a flowchart illustrating a method or methods 700 thatsupports timing chains for accessing memory cells in accordance withexamples as disclosed herein. The operations of method 700 may beimplemented by a memory device or its components as described herein.For example, the operations of method 700 may be performed by a memorydevice as described with reference to FIG. 6. In some examples, a memorydevice may execute a set of instructions to control the functionalelements of the memory device to perform the described functions.Additionally or alternatively, a memory device may perform aspects ofthe described functions using special-purpose hardware.

At 705, the memory device may implement, using bank group logicassociated with a bank group, a first delay between operations performedusing one or more banks of the bank group. The operations of 705 may beperformed according to the methods described herein. In some examples,aspects of the operations of 705 may be performed by a first delaycomponent as described with reference to FIG. 6.

At 710, the memory device may initiate a first sub-operation of anoperation performed using the one or more banks of the bank group basedon implementing the first delay. The operations of 710 may be performedaccording to the methods described herein. In some examples, aspects ofthe operations of 710 may be performed by a sub-operation component asdescribed with reference to FIG. 6.

At 715, the memory device may implement, using logic associated with abank of the bank group, a second delay between the first sub-operationof the operation and a second sub-operation of the operation based oninitiating the first sub-operation, the first delay having a firstduration longer than a second duration of the second delay. Theoperations of 715 may be performed according to the methods describedherein. In some examples, aspects of the operations of 715 may beperformed by a second delay component as described with reference toFIG. 6.

At 720, the memory device may perform the operation based on initiatingthe first sub-operation of the operation. The operations of 720 may beperformed according to the methods described herein. In some examples,aspects of the operations of 720 may be performed by an operationcomponent as described with reference to FIG. 6.

In some examples, an apparatus as described herein may perform a methodor methods, such as the method 700. The apparatus may include features,means, or instructions (e.g., a non-transitory computer-readable mediumstoring instructions executable by a processor) for implementing, usingbank group logic associated with a bank group, a first delay betweenoperations performed using one or more banks of the bank group,initiating a first sub-operation of an operation performed using the oneor more banks of the bank group based on implementing the first delay,implementing, using logic associated with a bank of the bank group, asecond delay between the first sub-operation of the operation and asecond sub-operation of the operation based on initiating the firstsub-operation, the first delay having a first duration longer than asecond duration of the second delay, and performing the operation basedon initiating the first sub-operation of the operation.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions foridentifying the second delay using a register of a memory device, whereimplementing the second delay may be based on identifying the seconddelay using the register.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions forreceiving, from a host device, a command to perform the operation usingan array of memory cells, where implementing the first delay may bebased on receiving the command.

Some examples of the method 700 and the apparatus described herein mayfurther include operations, features, means, or instructions forinitiating a set of sub-operations of the operation based onimplementing the first delay, where the set of sub-operations includesthe first sub-operation and the second sub-operation, and implementing,using the logic associated with the bank of the bank group, a respectivesecond delay for each sub-operation of the set of sub-operations basedon initiating the set of sub-operations, where performing the operationmay be based on initiating the set of sub-operations.

In some examples of the method 700 and the apparatus described herein,the logic may be positioned under an array of memory cells as part of aCuA logic. In some examples of the method 700 and the apparatusdescribed herein, the first delay includes the first duration betweeninitiating the operation and initiating a second operation differentthan the operation. In some examples of the method 700 and the apparatusdescribed herein, the second delay includes the second duration betweeninitiating the first sub-operation of the operation and the secondsub-operation of the operation. In some examples of the method 700 andthe apparatus described herein, the logic may be associated with a patchof the bank of the bank group.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Further, portions from two or more of the methods may be combined.

An apparatus is described. The apparatus may include bank group logicoperable to control one or more operations of a set of banks of a bankgroup and operable to implement a first delay between operationsperformed using the set of banks of the bank group, a bank of the bankgroup including an array of memory cells, and logic associated with thebank of the bank group and operable to implement a second delay betweensub-operations of an operation performed using the bank of the bankgroup.

Some examples of the apparatus may include a register to storeinformation associated with the second delay, where the logic associatedwith the bank may be operable to identify the information stored in theregister as part of implementing the second delay. In some examples, thelogic associated with the bank may be positioned under the array ofmemory cells as part of a CuA logic. In some examples, the logic furthermay include operations, features, means, or instructions for a local rowcontrol logic to identify the second delay, a buffer to receive thesecond delay identified by the local row control logic, a local senseamplifier control logic to amplify a signal associated with the seconddelay identified by the local row control logic, and a row driver toinitiate sub-operations of the operation based on the second delaystored in the buffer and the signal amplified by the local senseamplifier control logic. In some examples, the local row control logicand the local sense amplifier control logic may be distributed under twoor more patches of the bank of the bank group.

In some examples, the bank group includes the set of banks, each bank ofthe set of banks includes one or more sections, and each section of theone or more sections includes one or more patches. In some examples, thelogic may be associated with a section of the bank. In some examples,the logic may be associated with a patch of the bank. In some examples,the bank group logic further may include operations, features, means, orinstructions for an oscillator operable to implement the first delay. Insome examples, the bank group logic further may include operations,features, means, or instructions for a resistor-capacitor circuit toimplement the first delay. In some examples, the logic further mayinclude operations, features, means, or instructions for an oscillatoroperable to implement the second delay. In some examples, the logicfurther may include operations, features, means, or instructions for aresistor-capacitor circuit to implement the second delay.

An apparatus is described. The apparatus may include a bank groupincluding a set of banks, bank group logic operable to control one ormore operations of the set of banks, logic associated with a bank of thebank group, and a controller coupled with the bank group, the bank grouplogic, and the logic and operable to cause the apparatus to implement,using the bank group logic associated with the bank group, a first delaybetween the one or more operations performed using the set of banks ofthe bank group, initiate a first sub-operation of an operation performedusing the set of banks based on implementing the first delay, implement,using the logic, a second delay between the first sub-operation of theoperation and a second sub-operation of the operation based oninitiating the first sub-operation, the first delay having a firstduration longer than a second duration of the second delay, and performthe operation based on initiating the first sub-operation of theoperation.

Some examples may further include identifying the second delay using aregister of a memory device, where implementing the second delay may bebased on identifying the second delay using the register. Some examplesmay further include receiving, from a host device, a command to performthe operation using an array of memory cells, where implementing thefirst delay may be based on receiving the command. Some examples mayfurther include initiating a set of sub-operations of the operationbased on implementing the first delay, where the set of sub-operationsincludes the first sub-operation and the second sub-operation, andimplement, using the logic, a respective second delay for eachsub-operation of the set of sub-operations based on initiating the setof sub-operations, where performing the operation may be based oninitiating the set of sub-operations. In some examples, the logic may bepositioned under an array of memory cells as part of a CuA logic.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The terms “electronic communication,” “conductive contact,” “connected,”and “coupled” may refer to a relationship between components thatsupports the flow of signals between the components. Components areconsidered in electronic communication with (or in conductive contactwith or connected with or coupled with) one another if there is anyconductive path between the components that can, at any time, supportthe flow of signals between the components. At any given time, theconductive path between components that are in electronic communicationwith each other (or in conductive contact with or connected with orcoupled with) may be an open circuit or a closed circuit based on theoperation of the device that includes the connected components. Theconductive path between connected components may be a direct conductivepath between the components or the conductive path between connectedcomponents may be an indirect conductive path that may includeintermediate components, such as switches, transistors, or othercomponents. In some examples, the flow of signals between the connectedcomponents may be interrupted for a time, for example, using one or moreintermediate components such as switches or transistors.

The term “coupling” refers to condition of moving from an open-circuitrelationship between components in which signals are not presentlycapable of being communicated between the components over a conductivepath to a closed-circuit relationship between components in whichsignals are capable of being communicated between components over theconductive path. When a component, such as a controller, couples othercomponents together, the component initiates a change that allowssignals to flow between the other components over a conductive path thatpreviously did not permit signals to flow.

The term “isolated” refers to a relationship between components in whichsignals are not presently capable of flowing between the components.Components are isolated from each other if there is an open circuitbetween them. For example, two components separated by a switch that ispositioned between the components are isolated from each other when theswitch is open. When a controller isolates two components, thecontroller affects a change that prevents signals from flowing betweenthe components using a conductive path that previously permitted signalsto flow.

The term “layer” or “level” used herein refers to a stratum or sheet ofa geometrical structure (e.g., relative to a substrate). Each layer orlevel may have three dimensions (e.g., height, width, and depth) and maycover at least a portion of a surface. For example, a layer or level maybe a three dimensional structure where two dimensions are greater than athird, e.g., a thin-film. Layers or levels may include differentelements, components, and/or materials. In some examples, one layer orlevel may be composed of two or more sublayers or sublevels.

The devices discussed herein, including a memory array, may be formed ona semiconductor substrate, such as silicon, germanium, silicon-germaniumalloy, gallium arsenide, gallium nitride, etc. In some examples, thesubstrate is a semiconductor wafer. In other examples, the substrate maybe a silicon-on-insulator (SOI) substrate, such as silicon-on-glass(SOG) or silicon-on-sapphire (SOP), or epitaxial layers of semiconductormaterials on another substrate. The conductivity of the substrate, orsub-regions of the substrate, may be controlled through doping usingvarious chemical species including, but not limited to, phosphorous,boron, or arsenic. Doping may be performed during the initial formationor growth of the substrate, by ion-implantation, or by any other dopingmeans.

A switching component or a transistor discussed herein may represent afield-effect transistor (FET) and comprise a three terminal deviceincluding a source, drain, and gate. The terminals may be connected toother electronic elements through conductive materials, e.g., metals.The source and drain may be conductive and may comprise a heavily-doped,e.g., degenerate, semiconductor region. The source and drain may beseparated by a lightly-doped semiconductor region or channel. If thechannel is n-type (i.e., majority carriers are signals), then the FETmay be referred to as a n-type FET. If the channel is p-type (i.e.,majority carriers are holes), then the FET may be referred to as ap-type FET. The channel may be capped by an insulating gate oxide. Thechannel conductivity may be controlled by applying a voltage to thegate. For example, applying a positive voltage or negative voltage to ann-type FET or a p-type FET, respectively, may result in the channelbecoming conductive. A transistor may be “on” or “activated” when avoltage greater than or equal to the transistor's threshold voltage isapplied to the transistor gate. The transistor may be “off” or“deactivated” when a voltage less than the transistor's thresholdvoltage is applied to the transistor gate.

The description set forth herein, in connection with the appendeddrawings, describes example configurations and does not represent allthe examples that may be implemented or that are within the scope of theclaims. The term “exemplary” used herein means “serving as an example,instance, or illustration,” and not “preferred” or “advantageous overother examples.” The detailed description includes specific details toproviding an understanding of the described techniques. Thesetechniques, however, may be practiced without these specific details. Insome instances, well-known structures and devices are shown in blockdiagram form to avoid obscuring the concepts of the described examples.

In the appended figures, similar components or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If just the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof.

The various illustrative blocks and modules described in connection withthe disclosure herein may be implemented or performed with ageneral-purpose processor, a DSP, an ASIC, an FPGA or other programmablelogic device, discrete gate or transistor logic, discrete hardwarecomponents, or any combination thereof designed to perform the functionsdescribed herein. A general-purpose processor may be a microprocessor,but in the alternative, the processor may be any processor, controller,microcontroller, or state machine. A processor may also be implementedas a combination of computing devices (e.g., a combination of a DSP anda microprocessor, multiple microprocessors, one or more microprocessorsin conjunction with a DSP core, or any other such configuration).

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described above can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations. Also, as used herein, including in the claims, “or” as usedin a list of items (for example, a list of items prefaced by a phrasesuch as “at least one of” or “one or more of”) indicates an inclusivelist such that, for example, a list of at least one of A, B, or C meansA or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, asused herein, the phrase “based on” shall not be construed as a referenceto a closed set of conditions. For example, an exemplary step that isdescribed as “based on condition A” may be based on both a condition Aand a condition B without departing from the scope of the presentdisclosure. In other words, as used herein, the phrase “based on” shallbe construed in the same manner as the phrase “based at least in parton.”

Computer-readable media includes both non-transitory computer storagemedia and communication media including any medium that facilitatestransfer of a computer program from one place to another. Anon-transitory storage medium may be any available medium that can beaccessed by a general purpose or special purpose computer. By way ofexample, and not limitation, non-transitory computer-readable media cancomprise RAM, ROM, electrically erasable programmable read-only memory(EEPROM), compact disk (CD) ROM or other optical disk storage, magneticdisk storage or other magnetic storage devices, or any othernon-transitory medium that can be used to carry or store desired programcode means in the form of instructions or data structures and that canbe accessed by a general-purpose or special-purpose computer, or ageneral-purpose or special-purpose processor. Also, any connection isproperly termed a computer-readable medium. For example, if the softwareis transmitted from a website, server, or other remote source using acoaxial cable, fiber optic cable, twisted pair, digital subscriber line(DSL), or wireless technologies such as infrared, radio, and microwave,then the coaxial cable, fiber optic cable, twisted pair, digitalsubscriber line (DSL), or wireless technologies such as infrared, radio,and microwave are included in the definition of medium. Disk and disc,as used herein, include CD, laser disc, optical disc, digital versatiledisc (DVD), floppy disk and Blu-ray disc where disks usually reproducedata magnetically, while discs reproduce data optically with lasers.Combinations of the above are also included within the scope ofcomputer-readable media.

The description herein is provided to enable a person skilled in the artto make or use the disclosure. Various modifications to the disclosurewill be apparent to those skilled in the art, and the generic principlesdefined herein may be applied to other variations without departing fromthe scope of the disclosure. Thus, the disclosure is not limited to theexamples and designs described herein, but is to be accorded thebroadest scope consistent with the principles and novel featuresdisclosed herein.

1. A method, comprising: implementing, using bank group logic associatedwith a bank group, a first delay between operations performed using oneor more banks of the bank group; initiating a first sub-operation of anoperation performed using a first bank of the bank group based at leastin part on implementing the first delay; implementing, using logicdifferent from the bank group logic and associated with the first bankof the bank group, a second delay between the first sub-operation of theoperation and a second sub-operation of the operation based at least inpart on initiating the first sub-operation, the first sub-operation andthe second sub-operation performed using the first bank of the bankgroup and the first delay having a first duration longer than a secondduration of the second delay; and performing the operation based atleast in part on initiating the first sub-operation of the operation. 2.The method of claim 1, further comprising: identifying the second delayusing a register of a memory device, wherein implementing the seconddelay is based at least in part on identifying the second delay usingthe register.
 3. The method of claim 1, further comprising: receiving,from a host device, a command to perform the operation using an array ofmemory cells, wherein implementing the first delay is based at least inpart on receiving the command.
 4. The method of claim 1, furthercomprising: initiating a plurality of sub-operations of the operationbased at least in part on implementing the first delay, wherein theplurality of sub-operations comprises the first sub-operation and thesecond sub-operation; and implementing, using the logic associated withthe first bank of the bank group, a respective second delay for eachsub-operation of the plurality of sub-operations based at least in parton initiating the plurality of sub-operations, wherein performing theoperation is based at least in part on initiating the plurality ofsub-operations.
 5. The method of claim 1, wherein the logic ispositioned under an array of memory cells as part of a CMOS-under-array(CuA) logic.
 6. The method of claim 1, wherein the first delay comprisesthe first duration between initiating the operation and initiating asecond operation different than the operation.
 7. The method of claim 1,wherein the second delay comprises the second duration betweeninitiating the first sub-operation of the operation and the secondsub-operation of the operation.
 8. The method of claim 1, wherein thelogic is associated with a patch of the first bank of the bank group. 9.An apparatus, comprising: bank group logic operable to control one ormore operations of a plurality of banks of a bank group and operable toimplement a first delay between operations performed using the pluralityof banks of the bank group; a bank of the bank group comprising an arrayof memory cells; and logic different from the bank group logic,associated with the bank of the bank group, and operable to implement asecond delay between a first sub-operation of an operation performedusing the bank of the bank group and a second sub-operation of theoperation performed using the bank of the bank group.
 10. The apparatusof claim 9, further comprising: a register to store informationassociated with the second delay, wherein the logic associated with thebank is operable to identify the information stored in the register aspart of implementing the second delay.
 11. The apparatus of claim 9,wherein the logic associated with the bank is positioned under the arrayof memory cells as part of a CMOS-under-array (CuA) logic.
 12. Anapparatus, comprising: bank group logic operable to control one or moreoperations of a plurality of banks of a bank group and operable toimplement a first delay between operations performed using the pluralityof banks of the bank group; a bank of the bank group comprising an arrayof memory cells; and logic associated with the bank of the bank groupand operable to implement a second delay between sub-operations of anoperation performed using the bank of the bank group, wherein the logiccomprises: a local row control logic to identify the second delay; abuffer to receive the second delay identified by the local row controllogic; a local sense amplifier control logic to amplify a signalassociated with the second delay identified by the local row controllogic; and a row driver to initiate sub-operations of the operationbased at least in part on the second delay stored in the buffer and thesignal amplified by the local sense amplifier control logic.
 13. Theapparatus of claim 12, wherein the local row control logic and the localsense amplifier control logic are distributed under two or more patchesof the bank of the bank group.
 14. The apparatus of claim 9, wherein:the bank group comprises the plurality of banks; each bank of theplurality of banks comprises one or more sections; and each section ofthe one or more sections comprises one or more patches.
 15. Theapparatus of claim 9, wherein the logic is associated with a section ofthe bank.
 16. The apparatus of claim 9, wherein the logic is associatedwith a patch of the bank.
 17. The apparatus of claim 9, wherein the bankgroup logic further comprises an oscillator operable to implement thefirst delay.
 18. The apparatus of claim 9, wherein the bank group logicfurther comprises a resistor-capacitor circuit to implement the firstdelay.
 19. The apparatus of claim 9, wherein the logic further comprisesan oscillator operable to implement the second delay.
 20. The apparatusof claim 9, wherein the logic further comprises a resistor-capacitorcircuit to implement the second delay.
 21. An apparatus, comprising: abank group comprising a plurality of banks, bank group logic operable tocontrol one or more operations of the plurality of banks, logicdifferent from the bank group logic and associated with a bank of thebank group, and a controller coupled with the bank group, the bank grouplogic, and the logic, the controller operable to cause the apparatus to:implement, using the bank group logic associated with the bank group, afirst delay between the one or more operations performed using theplurality of banks of the bank group; initiate a first sub-operation ofan operation performed using the bank of the bank group based at leastin part on implementing the first delay; implement, using the logic, asecond delay between the first sub-operation of the operation and asecond sub-operation of the operation based at least in part oninitiating the first sub-operation, the first sub-operation and thesecond sub-operation performed using the bank of the bank group and thefirst delay having a first duration longer than a second duration of thesecond delay; and perform the operation based at least in part oninitiating the first sub-operation of the operation.
 22. The apparatusof claim 21, wherein the controller is further operable to cause theapparatus to: identify the second delay using a register of a memorydevice, wherein implementing the second delay is based at least in parton identifying the second delay using the register.
 23. The apparatus ofclaim 21, wherein the controller is further operable to cause theapparatus to: receive, from a host device, a command to perform theoperation using an array of memory cells, wherein implementing the firstdelay is based at least in part on receiving the command.
 24. Theapparatus of claim 21, wherein the controller is further operable tocause the apparatus to: initiate a plurality of sub-operations of theoperation based at least in part on implementing the first delay,wherein the plurality of sub-operations comprises the firstsub-operation and the second sub-operation; and implement, using thelogic, a respective second delay for each sub-operation of the pluralityof sub-operations based at least in part on initiating the plurality ofsub-operations, wherein performing the operation is based at least inpart on initiating the plurality of sub-operations.
 25. The apparatus ofclaim 21, wherein the logic is positioned under an array of memory cellsas part of a CMOS-under-array (CuA) logic.